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| DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor FEATURES * SMD encapsulation * Gold metallization ensures excellent reliability. handbook, halfpage BLT81 4 c b APPLICATIONS * Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. PINNING - SOT223 PIN 1 2 3 4 SYMBOL e b e c base emitter collector Fig.1 Simplified outline and symbol. DESCRIPTION emitter e 1 Top view 2 3 MAM043 - 1 QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter test circuit (see Fig.7). MODE OF OPERATION CW, class-B narrow band f (MHz) 900 VCE (V) 7.5 6 PL (W) 1.2 1.2 Gp (dB) 6 typ. 6.5 C (%) 60 typ. 77 1996 May 09 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Ts = 110 C; note 1 open base open collector CONDITIONS open emitter - - - - - - -65 - MIN. MAX. 20 9.5 2.5 500 500 2 +150 175 BLT81 UNIT V V V mA mA W C C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 2 W; Ts = 110 C; note 1 VALUE 32 UNIT K/W Note to the "Limiting values" and "Thermal characteristics" 1. Ts is the temperature at the soldering point of the collector pin. handbook, halfpage 1 MRC094 IC (A) 10-1 1 10 VCE (V) 102 Ts = 110 C. Fig.2 DC SOAR. 1996 May 09 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Note 1. Measured under pulsed conditions: tp 200 s; 0.02. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 1 mA open base; IC = 10 mA open collector; IE = 0.1 mA VCE = 10 V; VBE = 0 VCE = 5 V; IC = 300 mA; note 1; VCB = 7.5 V; IE = ie = 0; f = 1 MHz; VCE = 7.5 V; IC = 0; f = 1 MHz MIN. 20 9.5 2.5 - 25 - - TYP. - - - - - 2.7 1.7 BLT81 MAX. - - - 0.1 - 4 3 UNIT V V V mA pF pF handbook, halfpage 100 MRC090 handbook, halfpage 6 MRC086 hFE 80 Cc (pF) 4 60 40 2 20 0 0 100 200 300 IC (mA) 400 0 0 2 4 6 8 10 VCB (V) VCE = 7.5 V; tp 200 s; 0.02; Tj = 25 C. IE = ie = 0; f = 1 MHz; Tj = 25 C. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Collector capacitance as a function of collector-base voltage; typical values. 1996 May 09 4 Philips Semiconductors Product specification UHF power transistor APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter test circuit (see note 1 and Fig.7). MODE OF OPERATION f (MHz) 900 VCE (V) 7.5 6 Note 1. Ts is the temperature at the soldering point of the collector pin. Ruggedness in class-AB operation PL (W) 1.2 1.2 Gp (dB) 6 typ. 8 typ. 6.5 BLT81 C (%) 60 typ. 77 typ. 77 CW, class-B narrow band The BLT81 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: f = 900 MHz; VCE = 9 V; PL = 1.2 W; Ts 60 C. handbook, halfpage 10 MRC088 Gp (dB) 8 Gp (1) (2) (4) (3) C 100 C (%) 80 handbook, halfpage 2.5 MRC093 PL (W) 2.0 (1) 6 60 1.5 (2) 4 40 1.0 2 20 0.5 0 0 0.4 0.8 1.2 1.6 0 2.0 PL (W) 0 0 100 200 300 400 500 PIN (mW) Class-B; f = 900 MHz; Ts 60 C. (1) VCE = 7.5 V. (2) VCE = 6 V. (3) VCE = 7.5 V. (4) VCE = 6 V. Class-B; f = 900 MHz; Ts 60 C. (1) VCE = 7.5 V. (2) VCE = 6 V. Fig.5 Power gain and collector efficiency as functions of load power; typical values. Fig.6 Load power as a function of input power; typical values. 1996 May 09 5 Philips Semiconductors Product specification UHF power transistor Test circuit information BLT81 handbook, full pagewidth 50 input C1 C2 L1 C4 L4 C6 L5 DUT C8 L6 L8 C10 L10 C14 50 output C3 L2 C5 C7 C11 L7 L9 C13 R1 L3 VCC R2 C9 C12 MEA899 Fig.7 Common emitter test circuit for class-B operation at 900 MHz. 1996 May 09 6 Philips Semiconductors Product specification UHF power transistor List of components used in test circuit (see Figs 7 and 8) COMPONENT C1, C14 C2 C3, C5, C11, C13 C4 C6, C7, C10 C8 C9 C12 L1 L2 L3, L9 L4 L5 L6 L7 L8 L10 R1, R2 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION VALUE DIMENSIONS BLT81 CATALOGUE No. multilayer ceramic chip capacitor; note 1 100 pF multilayer ceramic chip capacitor; note 1 3 pF film dielectric trimmer 1.4 to 5.5 pF 2222 809 09004 multilayer ceramic chip capacitor; note 1 5.6 pF multilayer ceramic chip capacitor; note 1 5.1 pF multilayer ceramic chip capacitor; note 1 3.6 pF multilayer ceramic chip capacitor; note 1 220 pF multilayer ceramic chip capacitor; stripline; note 2 10 turns enamelled 0.6 mm copper wire grade 3B Ferroxcube wideband HF choke stripline; note 2 stripline; note 2 stripline; note 2 4 turns enamelled 0.6 mm copper wire stripline; note 2 stripline; note 2 metal film resistor 50 75 50 65 nH 50 50 10 , 0.25 W length 18 mm width 4.85 mm length 3.5 mm width 2.5 mm length 10 mm width 4.85 mm int. dia. 4.5 mm leads 2 x 5 mm length 15 mm width 4.85 mm length 24.6 mm width 4.85 mm 1 nF 50 250 nH length 26.6 mm width 4.85 mm int. dia. 4.5 mm leads 2 x 5 mm 4312 020 36640 2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (r = 2.2); thickness 1 "; thickness of the copper sheet 35 m. 16 1996 May 09 7 Philips Semiconductors Product specification UHF power transistor BLT81 handbook, full pagewidth 140 strap strap 80 rivets (14x) strap mounting screws (8x) strap VCC L9 L3 C9 C2 C1 C3 L1 C5 R1 C4 L2 C6 L4 L5 C7 L6 C8 C12 R2 L7 L8 C11 C10 L10 C14 C13 MEA898 Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads. Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7. 1996 May 09 8 Philips Semiconductors Product specification UHF power transistor BLT81 handbook, halfpage 10 Zi () 8 MRC091 handbook, halfpage 20 MRC092 ZL () RL 16 ri 6 12 4 xi 8 XL 2 4 0 800 840 880 920 960 1000 f (MHz) 0 800 840 880 920 960 1000 f (MHz) Class-B; VCE = 7.5 V; PL = 1.2 W; Ts 60 C. Class-B; VCE = 7.5 V; PL = 1.2 W; Ts 60 C. Fig.9 Input impedance as a function of frequency (series components); typical values. Fig.10 Load impedance as a function of frequency (series components); typical values. handbook, halfpage 10 MRC089 Gp (dB) 8 6 handbook, halfpage 4 Zi ZL MBA451 2 0 800 840 880 920 960 1000 f (MHz) Class-B; VCE = 7.5 V; PL = 1.2 W; Ts 60 C. Fig.11 Power gain as a function of frequency; typical values. Fig.12 Definition of transistor impedance. 1996 May 09 9 Philips Semiconductors Product specification UHF power transistor PACKAGE OUTLINE BLT81 handbook, full pagewidth 0.95 0.85 S 0.32 0.24 seating plane 6.7 6.3 3.1 2.9 0.1 S B 4 0.2 M A A 0.10 0.01 3.7 3.3 o 7.3 6.7 16 o max 16 1 1.80 max 10 max o 2 2.3 4.6 0.80 0.60 3 0.1 M B (4x) MSA035 - 1 Dimensions in mm. Fig.13 SOT223. 1996 May 09 10 Philips Semiconductors Product specification UHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLT81 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 09 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02) 805 4455, Fax. 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(02) 709-1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03) 750 5214, Fax. (03) 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. 9-5(800) 234-7831, Fax. (708) 296-8556 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. (040) 2783749, Fax. (040) 2788399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09) 849-4160, Fax. (09) 849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (022) 74 8000, Fax. (022) 74 8341 Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (63) 2 816 6380, Fax. (63) 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. (022) 612 2831, Fax. (022) 612 2327 Portugal: see Spain Romania: see Italy Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. (65) 350 2000, Fax. (65) 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. (011) 470-5911, Fax. (011) 470-5494 South America: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SAO PAULO-SP, Brazil, P.O. Box 7383 (01064-970), Tel. (011) 821-2333, Fax. (011) 829-1849 Spain: Balmes 22, 08007 BARCELONA, Tel. (03) 301 6312, Fax. (03) 301 4107 Sweden: Kottbygatan 7, Akalla. S-16485 STOCKHOLM, Tel. (0) 8-632 2000, Fax. (0) 8-632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. (01) 488 2211, Fax. (01) 481 77 30 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. (886) 2 382 4443, Fax. (886) 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. (66) 2 745-4090, Fax. (66) 2 398-0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. (0212) 279 2770, Fax. (0212) 282 6707 Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel. 380-44-4760297, Fax. 380-44-4766991 United Kingdom: Philips Semiconductors LTD., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. (0181) 730-5000, Fax. (0181) 754-8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800) 234-7381, Fax. (708) 296-8556 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. (381) 11 825 344, Fax. (359) 211 635 777 Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31-40-2724825 SCDS48 (c) Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127061/1200/02/pp12 Document order number: Date of release: 1996 May 09 9397 750 00835 |
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